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Modul G InGaAs photodetector

Modul G InGaAs photodetector

4741081

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Description

InGaAs Photodiode for measurements in the NIR beyond the bandgap of silicon. Typically used in experiments using 1550 nm or 1300 nm wavelengths. 4 pin plug for connection with 474 306.

Technical data

Sensitive Area: 0.3 mm diameter
Responsivity: 0.85 A/W @ 1300 nm
Wavelength range: 850 ... 1650 nm

Scope of delivery

1	4741084	InGaAs Photodetector
1	474209 8	Mounting Plate C25 with Carrier 20 mm

Related Documents

PDF (Experiment description)

P5.8.6.4 Frequency doubling, 1320 nm ? 660 nm

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Modul G InGaAs photodetector

Description

Technical data

Scope of delivery

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