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Investigating the diode properties of transistor junctions /
Investigating the diode properties of transistor junctions

Investigating the diode properties of transistor junctions

VP4.1.5.1

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Description

The experiment P4.1.5.1 examines the principle of the bipolar transistor and compares it with a diode. Here, the difference between an npn and a pnp transistor is explicitly investigated.

Components of equipment sets

1	57681 4	Plug-in board safety socket, 20/10
1	57867 4	Transistor BD 137, NPN, e.b., STE 4/50
1	57868 4	Transistor BD 138, PNP, e.b., STE 4/50
1	57732 4	Resistor 100 Ohm, STE 2/19
1	521488	AC/DC power supply 0...12 V/3 A
2	531120	Multimeter LDanalog 20
2	500621 4	Safety experiment cable, 50 cm, red
3	500622 4	Safety experiment cable, 50 cm, blue

Experiment Instructions

PDF (Experiment description)

P4.1.5.1 Investigating the diode properties of transistor junctions

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Investigating the diode properties of transistor junctions

Description

Components of equipment sets

Experiment Instructions

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