Home /
Technology /
Electrical Engineering /
Electrical drives /
Drive technology /
Industrial three-phase drives /
Static converter drives with asynchronous machines /
IGBT 1000 V/10 A

IGBT 1000 V/10 A

735346

8 IGBT 1000 V/10 A

Description

This IGBT (insulated gate bipolar transistor) demonstrates the behaviour of an enhancement-mode field-effect transistor (MOSFET) at the input and the behaviour of a bipolar power transistor at the output.
With a fast acting inverse diode and an RCD protective circuit which can be switched off. For use in rapid switching applications with high voltages such as: DC controllers, switched-mode power supplies and inverters.

Technical data

Collector-emitter reverse-bias voltage (V_CES): max. 1000 V
Collector current (I_{C AV}): max. 10 A
Collector-emitter saturation voltage (V_{CE SAT}): 3.5 V
Gate-emitter input capacitance (C_GE): 1.8 nF

Print page

Technical Service & Support:

Online Service Portal
Do you have any questions or suggestions regarding our devices, products, experiments, equipment sets or about our software? You need spare parts? FORM

Repair Service
You would like to register a repair? FORM

Europe

For European distributors, please visit: European distributors

Worldwide requests

IGBT 1000 V/10 A

Description

Technical data

Contact Us